Properties of GaN layers grown on N-face free-standing GaN substrates
2015 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 413, 81-85 p.Article in journal (Refereed) Published
GaN layers were homoepitaxially grown on N-face free-standing GaN substrates using a hot-wall metalorganic chemical vapor deposition method. By using optimized growth parameters, layers with a smooth morphology were obtained. The crystalline quality of epilayers was studied by a high resolution X-ray diffraction technique and compared to the substrates. Optical properties of the epilayers studied by low temperature time-resolved photoluminescence have shown longer recombination time for donor-bound exciton compared to the substrates. (C) 2014 Elsevier B.V. All rights reserved.
Place, publisher, year, edition, pages
Elsevier , 2015. Vol. 413, 81-85 p.
Characterization; Metalorganic chemical vapor deposition; Nitrides; Semiconducting III-V materials; Hot-wall epitaxy
Chemical Sciences Physical Sciences
IdentifiersURN: urn:nbn:se:liu:diva-114562DOI: 10.1016/j.jcrysgro.2014.11.020ISI: 000348037000015OAI: oai:DiVA.org:liu-114562DiVA: diva2:791637
Funding Agencies|Swedish Energy Agency; Swedish Research Council2015-03-022015-02-262015-09-22