Thin Ion-Gel Dielectric Layer to Enhance the Stability of Polymer Transistors
2015 (English)In: Science of Advanced Materials, ISSN 1947-2935, E-ISSN 1947-2943, Vol. 7, no 5, 874-880 p.Article in journal (Refereed) Published
Poly(3-hexylthiophene)(P3HT) transistors with a thin ion-gel gate dielectric layer (100 nm thickness) was fabricated. The thin ion-gel dielectric layer retarded the capacitance drop at high frequencies and the diffusion of the ionic molecules in the polymer active layer that are severe drawbacks of the ion-gel dielectric transistors. Thereby, the thin ion-gel transistors showed hysteresis-free I-V characteristics, less frequency-dependence, and enhanced bias-stability. The average charge mobility was similar to 2 cm(2)/Vs and the on/off ratio was 10(4)similar to 10(5). The dependence of the capacitance and the kinetics of ion translation on the thickness of the ion-gel were discussed by both experiments and theoretical calculations.
Place, publisher, year, edition, pages
AMER SCIENTIFIC PUBLISHERS , 2015. Vol. 7, no 5, 874-880 p.
Organic Thin Film Transistors; Polymer Transistors; Ion-Gel Dielectric; High Capacitance; Device Stability; poly(3-hexylthiophene)
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:liu:diva-114964DOI: 10.1166/sam.2015.1890ISI: 000349140900008OAI: oai:DiVA.org:liu-114964DiVA: diva2:794162
Funding Agencies|National Research Foundation (NRF) - Korean Government (MEST) through the Active Polymer Center Pattern Integration [R11-2007-050-01004-0]2015-03-102015-03-062015-03-10