Isolated electron spins in silicon carbide with millisecond coherence times
2015 (English)In: Nature Materials, ISSN 1476-1122, E-ISSN 1476-4660, Vol. 14, no 2, 160-163 p.Article in journal (Refereed) Published
The elimination of defects from SiC has facilitated its move to the forefront of the optoelectronics and power-electronics industries(1). Nonetheless, because certain SiC defects have electronic states with sharp optical and spin transitions, they are increasingly recognized as a platform for quantum information and nanoscale sensing(2-16). Here, we show that individual electron spins in high-purity monocrystalline 4H-SiC can be isolated and coherently controlled. Bound to neutral divacancy defects(2,3), these states exhibit exceptionally long ensemble Hahn-echo spin coherence times, exceeding 1 ms. Coherent control of single spins in a material amenable to advanced growth and microfabrication techniques is an exciting route towards wafer-scale quantum technologies.
Place, publisher, year, edition, pages
Nature Publishing Group , 2015. Vol. 14, no 2, 160-163 p.
IdentifiersURN: urn:nbn:se:liu:diva-114989DOI: 10.1038/NMAT4144ISI: 000348600200011PubMedID: 25437259OAI: oai:DiVA.org:liu-114989DiVA: diva2:794443
Funding Agencies|NSF; Center for Nanoscale Materials [CNM 39211]; Knut and Alice Wallenberg Foundation; Linkoping Linnaeus Initiative for Novel Functionalized Materials; Swedish Government Strategic Research Area Grant in Materials Science (Advanced Functional Materials); Ministry of Education, Science, Sports and Culture of Japan ; AFOSR MURI2015-03-112015-03-062015-03-26