Ti and Cr impurities in cubic and hexagonal AlN
(English)Manuscript (preprint) (Other academic)
AlN is a wide band gap semiconductor that is used in many fields, e.g. as electronic material, for piezoelectric applications but also as a component material in high performance hard coating alloys. The stable structure under ambient conditions is a hexagonal wurtzite structure, but it has also been observed in the tetrahedrally bonded cubic zinc-blende structure as well as cubic rock-salt phases that become stable at high pressure. The metastable rock-salt phase of AlN also forms during decomposition processes in hard-coating alloys such as (TiAl)N, (CrAl)N and (TiCrAl)N. Even though thermodynamically unstable, one can expect some amount of Ti and Cr to be present in the c-AlN phase during the decomposition. Still, little study has been done for the dilute (TMAl)N alloys with cubic B1 crystal structure. We study the electronic structure of Ti and Cr impurities in B1 AlN. Because of the limitations of standard local and semi-local approximations within the density functional theory (DFT) in the treatment of wide band gap semiconductors, as well as conventional hybrid functionals for systems consisting of correlated localized and delocalized orbitals, we apply the mHSE+Vw method, which has been developed specifically to dealing with these kind of problems. Simulations are done by means of the supercell technique with single impurities, as well as for the impurity pairs. The effects of different atomic configurations of the TM-impurities on phase stability and magnetic properties of the cubic B1 AlN is studied and compared to the those in hexagonal B4 structures. Our results underline the importance of correlation and magnetic effects for the description of properties of cubic AlN doped with Ti and Cr.
IdentifiersURN: urn:nbn:se:liu:diva-115402OAI: oai:DiVA.org:liu-115402DiVA: diva2:795353