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Preparation of la-doped BiFeO3 thin films with Fe2+ ions on Si substrates
Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2582-1740
Nanjing University, Peoples R China.
Nanjing University, Peoples R China.
Nanjing University, Peoples R China.
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2006 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 99, no 9, 094105- p.Article in journal (Refereed) Published
Abstract [en]

La-doped BiFeO3 thin films with Fe2+ ions have been prepared on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition in order to enhance the ferroelectric and magnetic properties. The targets for the film deposition were synthesized using a rapid liquid phase sintering technique to ensure the low leakage. The dielectric properties at room temperature and above were investigated. It was observed that the La doping greatly enhances the ferroelectric polarization at room temperature by modifying the film structure from rhombohedral to monoclinic. The saturation magnetization was enhanced about two times due to the Fe2+ ions in the thin films. (C) 2006 American Institute of Physics.

Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2006. Vol. 99, no 9, 094105- p.
National Category
Condensed Matter Physics
URN: urn:nbn:se:liu:diva-115721DOI: 10.1063/1.2195368ISI: 000237682900066OAI: diva2:796071
Available from: 2015-03-18 Created: 2015-03-18 Last updated: 2015-03-30

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