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Phase separation enhanced interfacial reactions in complex high-k dielectric films
Nanjing University, Peoples R China.
Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2582-1740
Nanjing University, Peoples R China.
Nanjing University, Peoples R China.
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2006 (English)In: Integrated Ferroelectrics, ISSN 1058-4587, E-ISSN 1607-8489, Vol. 86, no 1, 13-19 p.Article in journal (Refereed) Published
Abstract [en]

Amorphous CaZrOx, ZrAlxSiyOz and HfAlOx complex high-k dielectric films are deposited by pulsed laser deposition, and their microstructural characteristics and interfacial reactions between deposited films and Si substrates during high temperature annealing processes are investigated by X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. An essential finding is that nano-scale phase separation appears to be a common phenomenon for these amorphous films. The nonstoichiometric ZrOx or HfOx clusters precipitating from the amorphous matrix either react with silicon on the interface to form silicate or silicide interfacial layer, or nucleate and grow into nanosized crystals embedded in the outer layer of the dielectric films, which degrades the electrical performances of films.

Place, publisher, year, edition, pages
Taylor andamp; Francis: STM, Behavioural Science and Public Health Titles , 2006. Vol. 86, no 1, 13-19 p.
Keyword [en]
phase separation; interfacial reaction; high-k dielectric film
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URN: urn:nbn:se:liu:diva-115722DOI: 10.1080/10584580601085602ISI: 000243080600003OAI: diva2:796075
18th International Symposium on Integrated Ferrolectrics
Available from: 2015-03-18 Created: 2015-03-18 Last updated: 2015-03-30

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Gao, Feng
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Biomolecular and Organic ElectronicsThe Institute of Technology
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