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Thermal stability and interfacial properties of ZrAlxSiyOz films prepared by pulse-laser deposition
Nanjing University, Peoples R China.
Nanjing University, Peoples R China.
Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2582-1740
Nanjing University, Peoples R China.
2006 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 100, no 7, 074109- p.Article in journal (Refereed) Published
Abstract [en]

The thermal stability and interfacial properties of amorphous ZrAlxSiyOz films prepared under high vacuum conditions by pulse-laser deposition are investigated. A high anticrystallization temperature of 916 degrees C is identified by x-ray diffraction and differential scanning calorimeter. However, it is found that ZrOx clusters may precipitate from amorphous film matrix at a temperature as low as 700 degrees C, which subsequently react with Si substrate to form amorphous Zr-silicide interfacial layer. Due to the conductivity and good interfacial morphology of amorphous Zr-silicide interfacial layer, the Pt/ZrAlxSiyOz/IL/Si stack gate structures exhibit good electrical properties such as small equivalent oxide thickness of 0.9 nm, flatband voltage of 0.43 V, and low leakage density of 64 mA/cm(2) at 1 V gate voltage. (c) 2006 American Institute of Physics.

Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2006. Vol. 100, no 7, 074109- p.
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-115719DOI: 10.1063/1.2356786ISI: 000241248000066OAI: oai:DiVA.org:liu-115719DiVA: diva2:796076
Available from: 2015-03-18 Created: 2015-03-18 Last updated: 2017-12-04

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Gao, Feng

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