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High permittivity in zr doped NiO ceramics
Nanjing University, Peoples R China.
Nanjing University, Peoples R China.
Nanjing University, Peoples R China.
Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2582-1740
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2007 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 102, no 3, 034103- p.Article in journal (Refereed) Published
Abstract [en]

We report on measurements of the dielectric permittivity of NiO-based ceramics doped with Zr (ZNO). Samples were prepared by the traditional solid-state reaction method. The concentration of Zr has an effect on the dielectric properties of ZNO ceramics. High permittivity values (similar to 10(4)) were observed which remain almost constant from 200 K to 350 K at low frequencies. The high-dielectric-constant response of the ZNO ceramics is attributed mainly to a grain boundary (internal) barrier layer capacitance. (c) 2007 American Institute of Physics.

Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2007. Vol. 102, no 3, 034103- p.
National Category
Basic Medicine
URN: urn:nbn:se:liu:diva-115709DOI: 10.1063/1.2764217ISI: 000249240600073OAI: diva2:796086
Available from: 2015-03-18 Created: 2015-03-18 Last updated: 2015-03-30

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Gao, Feng
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