liu.seSearch for publications in DiVA
Change search
ReferencesLink to record
Permanent link

Direct link
An investigation into ultra-thin pseudobinary oxide (TiO2)(x)(Al2O3)(1-x) films as high-k gate dielectrics
Nanjing University, Peoples R China.
Nanjing University, Peoples R China.
Nanjing University, Peoples R China.
Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2582-1740
Show others and affiliations
2008 (English)In: Applied Physics A: Materials Science & Processing, ISSN 0947-8396, E-ISSN 1432-0630, Vol. 90, no 2, 379-384 p.Article in journal (Refereed) Published
Abstract [en]

As potential gate dielectric materials, pseudobinary oxide (TiO2)(x)(Al2O3)(1-x) (0.1 less than= x less than= 0.6) films (TAO) were deposited on Si (100) substrates by pulsed-laser deposition method and studied systematically via various measurements. By a special deposition process, including two separate steps, the TAO films were deposited in the form of two layers. The first layer was deposited at room temperature and the second layer was completed at the substrate temperature of 400 degrees C. Detailed data show that the properties of the TAO films are closely related to the ratio between TiO2 and Al2O3. The existence of the first layer deposited at room temperature can effectively restrain the formation of the interfacial layer. And according to the results of X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy performed on the films, no other information belonging to the silicon oxide could be observed. For the (TiO2)(0.4)(Al2O3)(0.6) film, the best result has been achieved among all samples and its dielectric constant is evaluated to be about 38. It is valuable for the amorphous TAO film as one of the promising dielectric materials for high-k gate dielectric applications.

Place, publisher, year, edition, pages
Springer Verlag (Germany) , 2008. Vol. 90, no 2, 379-384 p.
National Category
Materials Engineering
URN: urn:nbn:se:liu:diva-115705DOI: 10.1007/s00339-007-4290-4ISI: 000251369500028OAI: diva2:796089
Available from: 2015-03-18 Created: 2015-03-18 Last updated: 2015-03-30

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Gao, Feng
By organisation
Biomolecular and Organic ElectronicsThe Institute of Technology
In the same journal
Applied Physics A: Materials Science & Processing
Materials Engineering

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 65 hits
ReferencesLink to record
Permanent link

Direct link