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Effect of Pr doping on ferroelectric behaviors of Pb(Zr0.65Ti0.35)O-3
Nanjing University, Peoples R China.
Linköping University, Department of Physics, Chemistry and Biology, Biomolecular and Organic Electronics. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2582-1740
Nanjing University, Peoples R China.
Nanjing University, Peoples R China.
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2008 (English)In: International Journal of Modern Physics B, ISSN 0217-9792, Vol. 22, no 13, 2070-2081 p.Article in journal (Refereed) Published
Abstract [en]

Pr-doped Pb(Zr0.65Ti0.35)O-3 (Pb1-xPr (Zr0.65Ti0.35)(1-x)/O-4(3), PPZT) ceramic samples are prepared using conventional solid-state sintering method, and their structural, dielectric, ferroelectric, and piezoelectric properties are investigated, focusing on the effects of Pr-doping. Upon increasing Pr doping level x, a transition of the crystallographic structure from rhombohedral symmetry to tetrahedral and finally to pseudocubic symmetry is observed at x similar to 0.08. The detailed dielectric measurements present a clear indication of relaxor-like behaviors at x = 0.08, while the samples at x less than 0.08 offer slightly improved ferroelectric properties compared with pure Pb(Zr0.65Ti0.35)O-3. In spite of the dielectric relaxor behaviors induced by Pr-doping, both the ferroelectric and piezoelectric properties of PPZT are degraded at x = 0.08. The physics underlying the Pr-doping induced relaxor behaviors is then discussed.

Place, publisher, year, edition, pages
WORLD SCIENTIFIC PUBL CO PTE LTD , 2008. Vol. 22, no 13, 2070-2081 p.
Keyword [en]
relaxor ferroelectrics; structural phase transition; dielectric; ferroelectric; piezoelectric
National Category
URN: urn:nbn:se:liu:diva-115704DOI: 10.1142/S0217979208039332ISI: 000256223500004OAI: diva2:796094
Available from: 2015-03-18 Created: 2015-03-18 Last updated: 2015-03-31

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Gao, Feng
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Biomolecular and Organic ElectronicsThe Institute of Technology
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