Low-power write-once-read-many-times memory devices
2010 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 97, no 5, 053301Article in journal (Refereed) Published
We introduce low-power write-once-read-many-times memory devices fabricated from solution. These devices are based on an electron-only structure using colloidal ZnO semiconductor nanoparticles and the doped conjugated polymer polyethylenedioxythiophene doped with polystyrene sulfonic acid (PEDOT:PSS). The conductive p-doped conjugated polymer is permanently dedoped by injected electrons, producing an insulating state. This demonstration provides a class of memory devices with the potential for extremely low-cost, low-power-consumption applications, such as radio-frequency identification tags. (C) 2010 American Institute of Physics.
Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2010. Vol. 97, no 5, 053301
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:liu:diva-115696DOI: 10.1063/1.3473775ISI: 000281059500056OAI: oai:DiVA.org:liu-115696DiVA: diva2:796102
Funding Agencies|Cambridge Display Technology Ltd.2015-03-182015-03-182015-03-31