Entirely solution-processed write-once-read-many-times memory devices and their operation mechanism
2011 (English)In: Organic electronics, ISSN 1566-1199, Vol. 12, no 7, 1271-1274 p.Article in journal (Refereed) Published
We investigate the mechanism of operation of low-power write-once-read-many-times (WORM) memory devices based on injection of electrons from ZnO into PEDOT:PSS (polydioxythiophene doped with polystyrenesulfonic acid). Using Raman spectroscopy and in situ absorbance measurements, we directly observe the change of doping level of PEDOT during the device switching. Our results clearly show that the change of device conductance is due to the dedoping of p-doped PEDOT by injected electrons. Based on this understanding, we further demonstrate an entirely solution-processed low-power WORM device by inkjet printing metal electrodes onto arbitrary substrates. (C) 2011 Elsevier B.V. All rights reserved.
Place, publisher, year, edition, pages
Elsevier , 2011. Vol. 12, no 7, 1271-1274 p.
Organic memory; WORM; PEDOT:PSS; ZnO nanoparticle; Solution process; Inkjet printing
Other Physics Topics
IdentifiersURN: urn:nbn:se:liu:diva-115690DOI: 10.1016/j.orgel.2011.04.010ISI: 000291200400028OAI: oai:DiVA.org:liu-115690DiVA: diva2:796109
Funding Agencies|Cambridge Display Technology Ltd.2015-03-182015-03-182015-03-31