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The effect of dislocations on the efficiency of InGaN/GaN solar cells
University of Cambridge, England.
University of Cambridge, England.
University of Cambridge, England.
University of Cambridge, England.
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2013 (English)In: Solar Energy Materials and Solar Cells, ISSN 0927-0248, Vol. 117, 279-284 p.Article in journal (Refereed) Published
Abstract [en]

Two solar cells based on an InGaN/GaN p-i-n hetero-junction, but having different dislocation densities, were fabricated and characterized. The structures were grown on c-plane (0001) GaN-on-sapphire templates with different threading dislocation (TD) densities of 5 x 10(8) and 5 x 10(9) cm(-2). Structural characterization revealed the presence of V-defects in the InGaN epilayer. Since each V-defect was associated with a TD, the structural as well as the optical properties worsened with a higher TO density in the GaN/sapphire template. It was also found that additional dislocations were generated in the p-GaN layer over the V-defects in the InGaN layer. Because of its superior structural quality, the peak external quantum efficiency (EQE) of the low TO density sample was three times higher than that of the high TD density sample. (C) 2013 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
Elsevier , 2013. Vol. 117, 279-284 p.
Keyword [en]
GaN; InGaN; TEM characterization; EQE; Defects
National Category
Materials Engineering
URN: urn:nbn:se:liu:diva-115686DOI: 10.1016/j.solmat.2013.06.022ISI: 000325188400045OAI: diva2:796113

Funding Agencies|Engineering and Physical Sciences Research Council (EPSRC) UK, Science Bridge Award scheme

Available from: 2015-03-18 Created: 2015-03-18 Last updated: 2015-03-31

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