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Properties of p-n-junctions formed by a laser irradiation of a surface of n-Cd1-xZnx Te single crystal
Fedkovich Chernivtsi National University, Ukraine.
Fedkovich Chernivtsi National University, Ukraine.
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, Faculty of Science & Engineering. NAS Ukraine, Ukraine.
2015 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 30, no 3, 035016Article in journal (Refereed) Published
Abstract [en]

Photosensitive barrier structures were fabricated by high-power pulsed laser irradiation of a freshly-cleaved surface of n-type bulk Cd1-xZnxTe substrates. Their electrical properties were investigated and discussed. Dominant carrier mechanisms at a forward and a reverse bias in terms of a recombination and tunnel-recombination model were analyzed. At the illumination reaching 100 mW.cm(-2), these surface-barrier p-Cd1-xZnxTe/n-Cd1-xZnxTe structures were possessed by the following photoelectric parameters: open-circuit voltage V-oc = 0.61 V, short-circuit current I-sc = 0.21 mA and fill factor FF = 0.49, respectively.

Place, publisher, year, edition, pages
IOP Publishing: Hybrid Open Access , 2015. Vol. 30, no 3, 035016
Keyword [en]
laser irradiation; cadmium zinc telluride; p-n-junction; electrical properties; carrier transport
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:liu:diva-116969DOI: 10.1088/0268-1242/30/3/035016ISI: 000350631400017OAI: oai:DiVA.org:liu-116969DiVA: diva2:802596
Available from: 2015-04-13 Created: 2015-04-10 Last updated: 2017-12-04

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Shtepliuk, Ivan I.

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