Spin and photophysics of carbon-antisite vacancy defect in 4H silicon carbide: A potential quantum bit
2015 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 91, no 12, 121201- p.Article in journal (Refereed) Published
Silicon carbide with engineered point defects is considered as very promising material for the next generation devices, with applications ranging from electronics and photonics to quantum computing. In this context, we investigate the spin physics of the carbon antisite-vacancy pair that in its positive charge state enables a single photon source. We find by hybrid density functional theory and many-body perturbation theory that the neutral defect possesses a high spin ground state in 4H silicon carbide and provide spin-resonance signatures for its experimental identification. Our results indicate the possibility for the coherent manipulation of the electron spin by optical excitation of this defect at telecom wavelengths, and suggest the defect as a candidate for an alternative solid state quantum bit.
Place, publisher, year, edition, pages
American Physical Society , 2015. Vol. 91, no 12, 121201- p.
Physical Sciences Chemical Sciences
IdentifiersURN: urn:nbn:se:liu:diva-116950DOI: 10.1103/PhysRevB.91.121201ISI: 000351038400004OAI: oai:DiVA.org:liu-116950DiVA: diva2:802619
Funding Agencies|MTA Lendulet program of Hungarian Academy of Sciences; Knut and Alice Wallenberg Foundation; Swedish Foundation for Strategic Research program SRL [10-0026]; SNIC [001/12-275, 2013/1-331]; US Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-AC02-06CH11357]; Ministry of Education and Science of the Russian Federation [14.Y26.31.0005]; Tomsk State University Academic D. I. Mendeleev Fund Program2015-04-132015-04-102015-04-21