Growth optimization of AlGaN/GaN HEMT structure on 100 mm SiC substrate: Utilizing bottom-to-top approach
(English)Manuscript (preprint) (Other academic)
The structure of high electron mobility transistors (HEMTs) based on group-III nitride materials generally consists of three important blocks; a nucleation layer, a semi-insulating (SI) GaN buffer layer, and active layers. In this work, we present an overall growth optimization, which leads to superior crystalline quality and ultra-low thermal boundary resistance (TBR) of a 35-nm AlN nucleation layer, excellent crystalline quality of carbon-doped GaN buffer layer, and high mobility (> 2000 cm2/Vs) of two-dimensional gas (2DEG) in a simple AlGaN/GaN heterostructure grown on a SI SiC substrate.
IdentifiersURN: urn:nbn:se:liu:diva-117134OAI: oai:DiVA.org:liu-117134DiVA: diva2:805916