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Graphene self-switching diodes as zero-bias microwave detectors
Chalmers, Sweden.
Chalmers, Sweden.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0003-1000-0437
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2015 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 106, no 9, 093116- p.Article in journal (Refereed) Published
Abstract [en]

Self-switching diodes (SSDs) were fabricated on as-grown and hydrogen-intercalated epitaxial graphene on SiC. The SSDs were characterized as zero-bias detectors with on-wafer measurements from 1 to 67 GHz. The lowest noise-equivalent power (NEP) was observed in SSDs on the hydrogen-intercalated sample, where a flat NEP of 2.2 nW/Hz(1/2) and responsivity of 3.9 V/W were measured across the band. The measured NEP demonstrates the potential of graphene SSDs as zero-bias microwave detectors. (C) 2015 AIP Publishing LLC.

Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2015. Vol. 106, no 9, 093116- p.
National Category
Chemical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-117237DOI: 10.1063/1.4914356ISI: 000351069900061OAI: oai:DiVA.org:liu-117237DiVA: diva2:807093
Note

Funding Agencies|Swedish Research Council [VR 621-2012-4633]; European Science Foundation (ESF) under the EUROCORES Program EuroGRAPHENE (EPIGRAT); Swedish Foundation for Strategic Research (SSF), project "Graphene based high-frequency electronics" [RE10-0077]; Knut and Alice Wallenberg Foundation (KAW), project "Swedish Graphene Initiative"

Available from: 2015-04-22 Created: 2015-04-21 Last updated: 2017-12-04

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Ivanov, Ivan GueorguievUl-Hassan, JawadJanzén, Erik

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