Precursors for carbon doping of GaN in chemical vapor deposition
2015 (English)In: Journal of Vacuum Science & Technology B, ISSN 1071-1023, E-ISSN 1520-8567, Vol. 33, no 2, 021208- p.Article in journal (Refereed) Published
Methane (CH4), ethylene (C2H4), acetylene (C2H2), propane (C3H8), iso-butane (i-C4H10), and trimethylamine [N(CH3)(3)] have been investigated as precursors for intentional carbon doping of (0001) GaN in chemical vapor deposition. The carbon precursors were studied by comparing the efficiency of carbon incorporation in GaN together with their influence on morphology and structural quality of carbon doped GaN. The unsaturated hydrocarbons C2H4 and C2H2 were found to be more suitable for carbon doping than the saturated ones, with higher carbon incorporation efficiency and a reduced effect on the quality of the GaN epitaxial layers. The results indicate that the C2H2 molecule as a direct precursor, or formed by the gas phase chemistry, is a key species for carbon doping without degrading the GaN quality; however, the CH3 species should be avoided in the carbon doping chemistry.
Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2015. Vol. 33, no 2, 021208- p.
IdentifiersURN: urn:nbn:se:liu:diva-117385DOI: 10.1116/1.4914316ISI: 000351751100024OAI: oai:DiVA.org:liu-117385DiVA: diva2:807784
Funding Agencies|Swedish Foundation for Strategic Research (SSF); Swedish Defence Materiel Administration (FMV)2015-04-242015-04-242016-08-31