Size confinement effect in graphene grown on 6H-SiC (0001) substrate
2015 (English)In: Carbon, ISSN 0008-6223, E-ISSN 1873-3891, Vol. 86, 139-145 p.Article in journal (Refereed) Published
We have observed the energy structure in the density of occupied states of graphene grown on n-type 6H-SiC (0001). The structure revealed with photoelectron spectroscopy is described by creation of the quantum well states whose number and the energy position (E-1 = 0.3 eV, E-2 = 1.2 eV, E-3 = 2.6 eV) coincide with the calculated ones for deep (V = 2.9 eV) and narrow (d = 2.15 angstrom) quantum well formed by potential relief of the valence bands in the structure graphene/n-SiC. We believe that the quantum well states should be formed also in graphene on dielectric and in suspended graphene. (C) 2015 Elsevier Ltd. All rights reserved.
Place, publisher, year, edition, pages
Elsevier , 2015. Vol. 86, 139-145 p.
IdentifiersURN: urn:nbn:se:liu:diva-117782DOI: 10.1016/j.carbon.2015.01.015ISI: 000352922700017OAI: oai:DiVA.org:liu-117782DiVA: diva2:811291
Funding Agencies|Government of the Russian Federation [074-U01]; Graphene Flagship [CNECT-ICT-604391]2015-05-112015-05-082015-05-27