Optical Properties Of Metastable Shallow Acceptors In Mg‐Doped GaN Layers Grown By Metal‐Organic Vapor Phase Epitaxy
2010 (English)In: AIP Conference Proceedings / [ed] M. J. Caldas and N. Studart, American Institute of Physics (AIP), 2010, Vol. 1199, 110-111 p.Conference paper (Other academic)
GaN layers doped by Mg show a metastable behavior of the near-band-gap luminescence caused by electron irradiation or UV excitation. At low temperatures < 30 K the changes in luminescence are permanent. Heating to room temperature recovers the initial low temperature spectrum shape completely. Two acceptors are involved in the recombination process as confirmed by transient PL. In as-grown samples a possible candidate for the metastable acceptor is CN, while after annealing a second more stable acceptor related to Mg became active.
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2010. Vol. 1199, 110-111 p.
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-117858DOI: 10.1063/1.3295320OAI: oai:DiVA.org:liu-117858DiVA: diva2:811412
29th International Conference on the Physics of Semiconductors
FunderSwedish Energy AgencySwedish Research Council