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Optical Properties Of Metastable Shallow Acceptors In Mg‐Doped GaN Layers Grown By Metal‐Organic Vapor Phase Epitaxy
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-9840-7364
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-2597-3322
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
Shiogamaguchi, Tempaku‐ku, Nagoya 468‐8502, Japan .
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2010 (English)In: AIP Conference Proceedings / [ed] M. J. Caldas and N. Studart, American Institute of Physics (AIP), 2010, Vol. 1199, 110-111 p.Conference paper, Published paper (Other academic)
Abstract [en]

GaN layers doped by Mg show a metastable behavior of the near-band-gap luminescence caused by electron irradiation or UV excitation. At low temperatures < 30 K the changes in luminescence are permanent. Heating to room temperature recovers the initial low temperature spectrum shape completely. Two acceptors are involved in the recombination process as confirmed by transient PL. In as-grown samples a possible candidate for the metastable acceptor is CN, while after annealing a second more stable acceptor related to Mg became active.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2010. Vol. 1199, 110-111 p.
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-117858DOI: 10.1063/1.3295320OAI: oai:DiVA.org:liu-117858DiVA: diva2:811412
Conference
29th International Conference on the Physics of Semiconductors
Funder
Swedish Energy AgencySwedish Research Council
Available from: 2015-05-12 Created: 2015-05-12 Last updated: 2015-09-22Bibliographically approved

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Pozina, GaliaHemmingsson, CarlBergman, J.PederMonemar, Bo

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