Heteroepitaxial Indium Phosphide on Silicon
2010 (English)In: Proc. of SPIE Vol. 7719 77190Q-1, 2010, Vol. 7719, Q-1-Q-9 p.Conference paper (Refereed)
There is an intense interest on integration of III-V materials on silicon and silicon-on-insulator for realisation of opticalinterconnects, optical networking, imaging and disposable photonics for medical applications. Advances in photonicmaterials, structures and technologies are the main ingredients of this pursuit. We investigate nano epitaxial lateralovergrowth (NELOG) of InP material from the nano openings on a seed layer on the silicon wafer, by hydride vapourphase epitaxy (HVPE). The grown layers were analysed by cathodoluminescence (CL) in situ a scanning electronmicroscope, time-resolved photoluminescence (TR-PL), and atomic force microscope (AFM). The quality of the layersdepends on the growth parameters such as the V/III ratio, growth temperature, and layer thickness. CL measurementsreveal that the dislocation density can be as low as 2 – 3·107 cm-2 for a layer thickness of ~6 μm. For comparison, theseed layer had a dislocation density of ~1·109 cm-2. Since the dislocation density estimated on theoretical grounds fromTRPL measurements is of the same order of magnitude both for NELOG InP on Si and on InP substrate, the dislocationgeneration appears to be process related or coalescence related. Pertinent issues for improving the quality of the grownInP on silicon are avoiding damage in the openings due to plasma etching, pattern design to facilitate coalescence withminimum defects and choice of mask material compatible with InP to reduce thermal mismatch.
Place, publisher, year, edition, pages
2010. Vol. 7719, Q-1-Q-9 p.
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-117866DOI: 10.1117/12.858122OAI: oai:DiVA.org:liu-117866DiVA: diva2:811542
Silicon Photonics and Photonic Integrated Circuits II