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Highly reflective rear surface passivation design for ultra-thin Cu(In,Ga) Se-2 solar cells
Uppsala University, Sweden; University of Leuven, Belgium.
Uppsala University, Sweden.
Uppsala University, Sweden.
Uppsala University, Sweden.
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2015 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 582, 300-303 p.Article in journal (Refereed) Published
Abstract [en]

Al2O3 rear surface passivated ultra-thin Cu(In,Ga)Se-2 (CIGS) solar cells with Mo nano-particles (NPs) as local rear contacts are developed to demonstrate their potential to improve optical confinement in ultra-thin CIGS solar cells. The CIGS absorber layer is 380 nm thick and the Mo NPs are deposited uniformly by an up-scalable technique and have typical diameters of 150 to 200 nm. The Al2O3 layer passivates the CIGS rear surface between the Mo NPs, while the rear CIGS interface in contact with the Mo NP is passivated by [Ga]/([Ga] + [In]) (GGI) grading. It is shown that photon scattering due to the Mo NP contributes to an absolute increase in short circuit current density of 3.4 mA/cm(2); as compared to equivalent CIGS solar cells with a standard back contact.

Place, publisher, year, edition, pages
Elsevier , 2015. Vol. 582, 300-303 p.
Keyword [en]
Ultra-thin films; Copper Indium Gallium Selenide; Aluminum oxide; Surface passivation layer; Molybdenum; Nanoparticles; Local contacts; Solar cells
National Category
Physical Sciences
URN: urn:nbn:se:liu:diva-117642DOI: 10.1016/j.tsf.2014.10.050ISI: 000352225900064OAI: diva2:811567

Funding Agencies|European Commission via FP7 Marie Curie IEF [300998]; Knut and Alice Wallenberg Foundation [2012.0083]; Swedish Research Council via the Linkoping Linnaeus Environment LiLi-NFM [2008-6572]; European and Wallonia Region FEDER [ECP12020011678F]

Available from: 2015-05-12 Created: 2015-05-06 Last updated: 2015-05-29

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