Delay and distortion of light pulses by exciton resonancesin wide-gap semiconductors
2012 (English)In: Proceedings of the 20th Int. Symp. “Nanostructures: Physics and Technology", 2012, 18-19 p.Conference paper (Refereed)
Propagation of light pulses in wide-gap semiconductors, GaN and ZnO, has been studied by time-of-flightspectroscopy. It has been demonstrated that significant light delay exists near an exciton resonance and that this delay isaccompanied by pulse distortion and attenuation. Simulation of the pulse shape in the time-energy plane has permitted us torefine excitonic parameters inherent for bulk materials. The time-of-flight studies done over a wide temperature rangedemonstrate the strong influence of resonant scattering by phonons on the light delay in polar semiconductors.
Place, publisher, year, edition, pages
2012. 18-19 p.
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-117875ISBN: ISBN 978-5-91326-179-3OAI: oai:DiVA.org:liu-117875DiVA: diva2:811582
20th Int. Symp. “Nanostructures: Physics and Technology"