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Delay and distortion of light pulses by exciton resonancesin wide-gap semiconductors
Ioffe Physical-Technical Institute.
A.M. Prokhorov General Physics Institute.
Ioffe Physical-Technical Institute.
Ioffe Physical-Technical Institute.
Show others and affiliations
2012 (English)In: Proceedings of the 20th Int. Symp. “Nanostructures: Physics and Technology", 2012, 18-19 p.Conference paper, Published paper (Refereed)
Abstract [en]

Propagation of light pulses in wide-gap semiconductors, GaN and ZnO, has been studied by time-of-flightspectroscopy. It has been demonstrated that significant light delay exists near an exciton resonance and that this delay isaccompanied by pulse distortion and attenuation. Simulation of the pulse shape in the time-energy plane has permitted us torefine excitonic parameters inherent for bulk materials. The time-of-flight studies done over a wide temperature rangedemonstrate the strong influence of resonant scattering by phonons on the light delay in polar semiconductors.

Place, publisher, year, edition, pages
2012. 18-19 p.
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-117875ISBN: ISBN 978-5-91326-179-3 (print)OAI: oai:DiVA.org:liu-117875DiVA: diva2:811582
Conference
20th Int. Symp. “Nanostructures: Physics and Technology"
Available from: 2015-05-12 Created: 2015-05-12 Last updated: 2015-05-26

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