A defect center for quantum computing: Mo in SiC
(English)Manuscript (preprint) (Other academic)
The electronic structure and vibrational properties of molybdenum (Mo) in SiC are analyzed and investigated in detail. Mo is considered as occupying the silicon-carbon divacancy in the so-called asymmetric split vacancy (ASV) configuration. Group-theoretical considerations within this model are used to explain the experimental results (optical properties and behavior in magnetic field). The vibrational properties of the defect are studied using simple the “defect molecule” model with parameters determined phenomenologically from the experimental data. The position of Mo in the ASV configuration deduced from this model is shown to be in good agreement with the earlier reported data from ab initio supercell calculations. The usefulness of molybdenum in SiC in quantum computing is investigated, and it shown that Mo is a highly promising candidate for quantum computing.
IdentifiersURN: urn:nbn:se:liu:diva-117973OAI: oai:DiVA.org:liu-117973DiVA: diva2:812562