Optical properties of AlGaN/GaN epitaxial layers grown on free-standing Ga-face and N-face GaN substrates
2015 (English)Manuscript (preprint) (Other academic)
Comparative studies have been made on AlGaN/GaN epitaxial layers grown by metalorganic chemical vapor deposition on both Ga- and N-face free-standing GaN substrates fabricated by halide vapor phase epitaxy. By time-resolved photoluminescence studies, we conclude that two-dimensional electron gas (2DEG) only appears for heterostructures grown on Ga-face. We studied the temporal behavior of the 2DEG emission, which correlates well with recombination processes in an asymmetric triangular potential well formed by an AlGaN/GaN structure grown in  direction.
Place, publisher, year, edition, pages
Physical Sciences Physical Chemistry
IdentifiersURN: urn:nbn:se:liu:diva-118114OAI: oai:DiVA.org:liu-118114DiVA: diva2:813234