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Design of a polarization independent SOA at 1.55 mu m using composite InAsP/InGaAs quantum wells.
Eindhoven University of Technology, Netherlands.
Eindhoven University of Technology, Netherlands.
Linköping University, Department of Physics, Chemistry and Biology, Chemical and Optical Sensor Systems. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-7104-7127
Eindhoven University of Technology, Netherlands.
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1999 (English)In: ECIO99: 9TH EUROPEAN CONFERENCE ON INTEGRATED OPTICS AND TECHNICAL EXHIBITION, IST INT COMUNICAZIONI , 1999, 483-486 p.Conference paper (Refereed)
Abstract [en]

We aim to extend the polarization independent SOA reported by Tiemeijer(1) to 1550 nm. Conventional quantum wells (QW) do not allow TM-gain at 1550 nm without exceeding the critical layer thickness. Composite InAsP/InGaAs QWs show high TM-differential gain at 1550 nm while simultaneously providing strain compensation.

Place, publisher, year, edition, pages
IST INT COMUNICAZIONI , 1999. 483-486 p.
National Category
Composite Science and Engineering
Identifiers
URN: urn:nbn:se:liu:diva-116059ISI: 000169321900105OAI: oai:DiVA.org:liu-116059DiVA: diva2:813308
Conference
9th European Conference on Integrated Optics and Technical Exhibition
Available from: 2015-05-22 Created: 2015-03-24 Last updated: 2015-05-29

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Kemerink, Martijn
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Chemical and Optical Sensor SystemsThe Institute of Technology
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