Design of composite InAsP/InGaAs quantum wells for a 1.55 mu m polarization independent semiconductor optical amplifier
1999 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 75, no 18, 2782-2784 p.Article in journal (Refereed) Published
We investigate a composite InAsP/InGaAs quantum well in which an 8 nm tensile strained InGaAs well is surrounded by two compressively strained InAsP layers which feature a 70:30 conduction band offset ratio. The composite quantum well is found to provide a high TM differential gain. The InAsP layers provide strain compensation while simultaneously shifting the band gap to the relevant 1.55 mu m wavelength region and increasing the electron confinement. Composite InAsP/InGaAs quantum wells are a promising candidate for realizing a polarization independent semiconductor optical amplifier at 1.55 mu m.
Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 1999. Vol. 75, no 18, 2782-2784 p.
IdentifiersURN: urn:nbn:se:liu:diva-116058DOI: 10.1063/1.125148ISI: 000083295500026OAI: oai:DiVA.org:liu-116058DiVA: diva2:813309