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Design of composite InAsP/InGaAs quantum wells for a 1.55 mu m polarization independent semiconductor optical amplifier
Eindhoven University of Technology, Netherlands.
Eindhoven University of Technology, Netherlands.
Linköping University, Department of Physics, Chemistry and Biology, Chemical and Optical Sensor Systems. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-7104-7127
Eindhoven University of Technology, Netherlands.
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1999 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 75, no 18, 2782-2784 p.Article in journal (Refereed) Published
Abstract [en]

We investigate a composite InAsP/InGaAs quantum well in which an 8 nm tensile strained InGaAs well is surrounded by two compressively strained InAsP layers which feature a 70:30 conduction band offset ratio. The composite quantum well is found to provide a high TM differential gain. The InAsP layers provide strain compensation while simultaneously shifting the band gap to the relevant 1.55 mu m wavelength region and increasing the electron confinement. Composite InAsP/InGaAs quantum wells are a promising candidate for realizing a polarization independent semiconductor optical amplifier at 1.55 mu m.

Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 1999. Vol. 75, no 18, 2782-2784 p.
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-116058DOI: 10.1063/1.125148ISI: 000083295500026OAI: oai:DiVA.org:liu-116058DiVA: diva2:813309
Available from: 2015-05-22 Created: 2015-03-24 Last updated: 2015-05-29

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Kemerink, Martijn
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