Optical detection of ballistically injected electrons in III/V heterostructures
2001 (English)In: PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, SPRINGER-VERLAG BERLIN , 2001, Vol. 87, 819-820 p.Conference paper (Refereed)
We present a novel spectroscopic technique which is based on the ballistic injection of minority carriers from the tip of an STM into a semiconductor heterostructure. By analyzing the resulting electro-luminescence spectrum as a function of tip-sample bias, both the injection barrier height and the carrier relaxation rate Gamma (s) after injection can be determined. From current dependent measurements we find that carrier trapping by impurities causes a significant non-radiative recombination channel at room temperature.
Place, publisher, year, edition, pages
SPRINGER-VERLAG BERLIN , 2001. Vol. 87, 819-820 p.
, SPRINGER PROCEEDINGS IN PHYSICS, ISSN 0930-8989 ; 87
IdentifiersURN: urn:nbn:se:liu:diva-118226DOI: 10.1007/s003390100669ISI: 000171592800387ISBN: 3-540-41778-8OAI: oai:DiVA.org:liu-118226DiVA: diva2:813318
25th International Conference on the Physics of Semiconductors (ICPS25)