Temperature-dependent built-in potential in organic semiconductor devices
2006 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 88, no 19, 192108Article in journal (Refereed) Published
The temperature dependence of the built-in voltage of organic semiconductor devices is studied. The results are interpreted using a simple analytical model for the band bending at the electrodes. It is based on the notion that, even at zero current, diffusion may cause a significant charge density in the entire device, and hence a temperature dependent band bending. Both magnitude and temperature dependence of the built-in potential of various devices are consistently described by the model, as the effects of a thin LiF layer between cathode and active layer.
Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2006. Vol. 88, no 19, 192108
IdentifiersURN: urn:nbn:se:liu:diva-118201DOI: 10.1063/1.2205007ISI: 000237477400046OAI: oai:DiVA.org:liu-118201DiVA: diva2:813494