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Scanning Kelvin probe microscopy on organic field-effect transistors during gate bias stress
Eindhoven University of Technology, Netherlands.
Eindhoven University of Technology, Netherlands.
Eindhoven University of Technology, Netherlands.
Linköping University, Department of Physics, Chemistry and Biology, Chemical and Optical Sensor Systems. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-7104-7127
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2007 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 90, no 19, 192104Article in journal (Refereed) Published
Abstract [en]

The reliability of organic field-effect transistors is studied using both transport and scanning Kelvin probe microscopy measurements. A direct correlation between the current and potential of a p-type transistor is demonstrated. During gate bias stress, a decrease in current is observed, that is correlated with the increased curvature of the potential profile. After gate bias stress, the potential changes consistently in all operating regimes: the potential profile gets more convex, in accordance with the simultaneously observed shift in threshold voltage. The changes of the potential are attributed to positive immobile charges, which contribute to the potential, but not to the current.

Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2007. Vol. 90, no 19, 192104
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-118199DOI: 10.1063/1.2737419ISI: 000246413400037OAI: oai:DiVA.org:liu-118199DiVA: diva2:813496
Available from: 2015-05-22 Created: 2015-05-22 Last updated: 2015-06-01

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Kemerink, Martijn
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