Charge trapping at the dielectric of organic transistors visualized in real time and space
2008 (English)In: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 20, no 5, 975-979 p.Article in journal (Refereed) Published
Scanning Kelvin probe microscopy demonstrates that water-induced charge trapping at the SiO2 dielectric visualized in real time and space - is responsible for the commonly observed gate-bias-induced threshold-voltage shift in organic field-effect transistors. When a bias is applied to the electrodes, charges are injected onto the SiO2 (see background of the figure). When the contacts are grounded, the charges are released again (foreground picture).
Place, publisher, year, edition, pages
Wiley-VCH Verlag , 2008. Vol. 20, no 5, 975-979 p.
IdentifiersURN: urn:nbn:se:liu:diva-118195DOI: 10.1002/adma.200702688ISI: 000254181900018OAI: oai:DiVA.org:liu-118195DiVA: diva2:813501