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On the width of the recombination zone in ambipolar organic field effect transistors
Linköping University, Department of Physics, Chemistry and Biology, Chemical and Optical Sensor Systems. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-7104-7127
Eindhoven University of Technology, Netherlands.
Philips Research Labs, Netherlands; University of Groningen, Netherlands.
Eindhoven University of Technology, Netherlands; Philips Research Labs, Netherlands.
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2008 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 93, no 3, 033312Article in journal (Refereed) Published
Abstract [en]

The performance of organic light emitting field effect transistors is strongly influenced by the width of the recombination zone. We present an analytical model for the recombination profile. By assuming Langevin recombination, the recombination zone width W is found to be given by W = root 4.34d delta, with d and delta the gate dielectric and accumulation layer thicknesses, respectively. The model compares favorably to both numerical calculations and measured surface potential profiles of an actual ambipolar device.

Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2008. Vol. 93, no 3, 033312
National Category
Physical Sciences
URN: urn:nbn:se:liu:diva-118191DOI: 10.1063/1.2963488ISI: 000257968700087OAI: diva2:813505
Available from: 2015-05-22 Created: 2015-05-22 Last updated: 2015-06-01

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Kemerink, Martijn
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Chemical and Optical Sensor SystemsThe Institute of Technology
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