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Photoluminescence enhancement in thin films of PbSe nanocrystals
Eindhoven University of Technology, Netherlands.
Eindhoven University of Technology, Netherlands.
Eindhoven University of Technology, Netherlands.
Eindhoven University of Technology, Netherlands.
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2008 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 93, no 12, 121906Article in journal (Refereed) Published
Abstract [en]

Remarkable photoluminescence enhancement (PLE) in submonolayer films of PbSe nanocrystals (NCs) upon continuous illumination was observed. The intensity increase from films on InP substrates was highest in vacuum, while for films on Si/SiO(2) substrates the PLE was stronger in air. The magnitude of the PLE was found to depend on the excitation intensity, being higher for a weaker irradiation power. The possible mechanisms behind the phenomenon of the PLE are discussed and it is suggested to originate mainly from charge trapping outside the NCs core.

Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2008. Vol. 93, no 12, 121906
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-118190DOI: 10.1063/1.2989131ISI: 000259799100024OAI: oai:DiVA.org:liu-118190DiVA: diva2:813506
Note

Funding Agencies|Ministry of Economic Affairs; NanoNed; Interreg program (OLED)

Available from: 2015-05-22 Created: 2015-05-22 Last updated: 2015-06-01

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Kemerink, Martijn
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Chemical and Optical Sensor SystemsThe Institute of Technology
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