liu.seSearch for publications in DiVA
Change search
ReferencesLink to record
Permanent link

Direct link
Proton migration mechanism for operational instabilities in organic field-effect transistors
Eindhoven University of Technology, Netherlands.
Eindhoven University of Technology, Netherlands; Philips Research Labs Eindhoven, Netherlands.
Philips Research Labs Eindhoven, Netherlands.
Linköping University, Department of Physics, Chemistry and Biology, Chemical and Optical Sensor Systems. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-7104-7127
Show others and affiliations
2010 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 82, no 7, 075322Article in journal (Refereed) Published
Abstract [en]

Organic field-effect transistors exhibit operational instabilities involving a shift of the threshold gate voltage when a gate bias is applied. For a constant gate bias the threshold voltage shifts toward the applied gate bias voltage, an effect known as the bias-stress effect. Here, we report on a detailed experimental and theoretical study of operational instabilities in p-type transistors with silicon-dioxide gate dielectric both for a constant as well as for a dynamic gate bias. We associate the instabilities with a reversible reaction in the organic semiconductor in which holes are converted into protons in the presence of water and a reversible migration of these protons into the gate dielectric. We show how redistribution of charge between holes in the semiconductor and protons in the gate dielectric can consistently explain the experimental observations. Furthermore, we show how a shorter period of application of a gate bias leads to a faster backward shift of the threshold voltage when the gate bias is removed. The proposed mechanism is consistent with the observed acceleration of the bias-stress effect with increasing humidity, increasing temperature, and increasing energy of the highest molecular orbital of the organic semiconductor.

Place, publisher, year, edition, pages
American Physical Society , 2010. Vol. 82, no 7, 075322
National Category
Physical Sciences
URN: urn:nbn:se:liu:diva-118171DOI: 10.1103/PhysRevB.82.075322ISI: 000281139000001OAI: diva2:813679

Funding Agencies|Dutch Technology Foundation STW; Ministry of Economic Affairs; NWO

Available from: 2015-05-25 Created: 2015-05-22 Last updated: 2015-06-01

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Kemerink, Martijn
By organisation
Chemical and Optical Sensor SystemsThe Institute of Technology
In the same journal
Physical Review B. Condensed Matter and Materials Physics
Physical Sciences

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 24 hits
ReferencesLink to record
Permanent link

Direct link