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Revealing Buried Interfaces to Understand the Origins of Threshold Voltage Shifts in Organic Field-Effect Transistors
Philips Research Labs, Netherlands; Eindhoven University of Technology, Netherlands.
Philips Research Labs, Netherlands; University of Groningen, Netherlands.
Philips Research Labs, Netherlands; University of Groningen, Netherlands.
Philips Research Labs, Netherlands.
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2010 (English)In: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 22, no 45, 5105-5109 p.Article in journal (Refereed) Published
Abstract [en]

The semiconductor of an organic field-effect transistor is stripped with adhesive tape, yielding an exposed gate dielectric, accessible for various characterization techniques. By using scanning Kelvin probe microscopy we reveal that trapped charges after gate bias stress are located at the gate dielectric and not in the semiconductor. Charging of the gate dielectric is confirmed by the fact that the threshold voltage shift remains, when a pristine organic semiconductor is deposited on the exposed gate dielectric of a stressed and delaminated field-effect transistor.

Place, publisher, year, edition, pages
Wiley-VCH Verlag , 2010. Vol. 22, no 45, 5105-5109 p.
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-118168DOI: 10.1002/adma.201001865ISI: 000285396400007PubMedID: 20859942OAI: oai:DiVA.org:liu-118168DiVA: diva2:813682
Note

Funding Agencies|Dutch Technology Foundation STW; EU [212311]

Available from: 2015-05-25 Created: 2015-05-22 Last updated: 2015-06-01

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Kemerink, Martijn
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Chemical and Optical Sensor SystemsThe Institute of Technology
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ReferencesLink to record
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