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Effect of Coulomb scattering from trapped charges on the mobility in an organic field-effect transistor
Eindhoven University of Technology, Netherlands.
Eindhoven University of Technology, Netherlands.
Eindhoven University of Technology, Netherlands; Philips Research Labs Eindhoven, Netherlands.
Philips Research Labs Eindhoven, Netherlands.
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2011 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 83, no 12, 125310Article in journal (Refereed) Published
Abstract [en]

We investigate the effect of Coulomb scattering from trapped charges on the mobility in the two-dimensional channel of an organic field-effect transistor. The number of trapped charges can be tuned by applying a prolonged gate bias. Surprisingly, after increasing the number of trapped charges to a level where strong Coulomb scattering is expected, the mobility has decreased only slightly. Simulations show that this can be explained by assuming that the trapped charges are located in the gate dielectric at a significant distance from the channel instead of in or very close to the channel. The effect of Coulomb scattering is then strongly reduced.

Place, publisher, year, edition, pages
American Physical Society , 2011. Vol. 83, no 12, 125310
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:liu:diva-118164DOI: 10.1103/PhysRevB.83.125310ISI: 000288595000010OAI: oai:DiVA.org:liu-118164DiVA: diva2:813690
Note

Funding Agencies|Dutch Technology Foundation STW; applied science division of NWO; Ministry of Economic Affairs

Available from: 2015-05-25 Created: 2015-05-22 Last updated: 2015-06-01

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Kemerink, Martijn
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Chemical and Optical Sensor SystemsThe Institute of Technology
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ReferencesLink to record
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