Effect of Coulomb scattering from trapped charges on the mobility in an organic field-effect transistor
2011 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 83, no 12, 125310Article in journal (Refereed) Published
We investigate the effect of Coulomb scattering from trapped charges on the mobility in the two-dimensional channel of an organic field-effect transistor. The number of trapped charges can be tuned by applying a prolonged gate bias. Surprisingly, after increasing the number of trapped charges to a level where strong Coulomb scattering is expected, the mobility has decreased only slightly. Simulations show that this can be explained by assuming that the trapped charges are located in the gate dielectric at a significant distance from the channel instead of in or very close to the channel. The effect of Coulomb scattering is then strongly reduced.
Place, publisher, year, edition, pages
American Physical Society , 2011. Vol. 83, no 12, 125310
IdentifiersURN: urn:nbn:se:liu:diva-118164DOI: 10.1103/PhysRevB.83.125310ISI: 000288595000010OAI: oai:DiVA.org:liu-118164DiVA: diva2:813690
Funding Agencies|Dutch Technology Foundation STW; applied science division of NWO; Ministry of Economic Affairs2015-05-252015-05-222015-06-01