The operational mechanism of ferroelectric-driven organic resistive switches
2012 (English)In: Organic electronics, ISSN 1566-1199, Vol. 13, no 1, 147-152 p.Article in journal (Refereed) Published
The availability of a reliable memory element is crucial for the fabrication of plastic logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field modulates the charge injection from a metallic electrode into the organic semiconductor, switching the diode from injection limited to space charge limited. The modeling rationalizes the previously observed exponential dependence of the on/off ratio on injection barrier height. We find a lower limit of about 50 nm for the feature size that can be used in a crossbar array, translating into a rewritable memory with an information density of the order of 1 Gb/cm(2).
Place, publisher, year, edition, pages
Elsevier , 2012. Vol. 13, no 1, 147-152 p.
Charge transport; Organic semiconductors; Ferroelectric nanostructures; Data storage; Thin films
IdentifiersURN: urn:nbn:se:liu:diva-118152DOI: 10.1016/j.orgel.2011.10.013ISI: 000298152100022OAI: oai:DiVA.org:liu-118152DiVA: diva2:813707
Funding Agencies|EU 2015-05-252015-05-222015-06-02