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Charge Trapping by Self-Assembled Monolayers as the Origin of the Threshold Voltage Shift in Organic Field-Effect Transistors
University of Groningen, Netherlands; Philips Research Labs, Netherlands.
University of Groningen, Netherlands; Philips Research Labs, Netherlands.
Philips Research Labs, Netherlands; Eindhoven University of Technology, Netherlands.
Graz University of Technology, Austria.
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2012 (English)In: Small, ISSN 1613-6810, E-ISSN 1613-6829, Vol. 8, no 2, 241-245 p.Article in journal (Refereed) Published
Abstract [en]

The threshold voltage is an important property of organic field-effect transistors. By applying a self-assembled monolayer (SAM) on the gate dielectric, the value can be tuned. After electrical characterization, the semiconductor is delaminated. The surface potentials of the revealed SAM perfectly agree with the threshold voltages, which demonstrate that the shift is not due to the dipolar contribution, but due to charge trapping by the SAM.

Place, publisher, year, edition, pages
Wiley-VCH Verlag , 2012. Vol. 8, no 2, 241-245 p.
Keyword [en]
organosilanes; self-assembly; organic field-effect transistors; threshold voltage; scanning Kelvin-probe microscopy
National Category
Physical Sciences
URN: urn:nbn:se:liu:diva-118150DOI: 10.1002/smll.201101467ISI: 000299100500009PubMedID: 22121119OAI: diva2:813722

Funding Agencies|Dutch Polymer Institute [624]; European project ONE-P [212311]

Available from: 2015-05-25 Created: 2015-05-22 Last updated: 2015-06-02

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Kemerink, Martijn
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ReferencesLink to record
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