liu.seSearch for publications in DiVA
Change search
ReferencesLink to record
Permanent link

Direct link
Morphology changes of thin Pd films grown on SiO2: influence of adsorbates and temperature
Linköping University, Department of Physics, Chemistry and Biology, Chemical and Optical Sensor Systems. Linköping University, Faculty of Science & Engineering. (Tillämpad Fysik)ORCID iD: 0000-0002-0873-2877
Linköping University, Department of Medical and Health Sciences.
Linköping University, Department of Physics, Chemistry and Biology, Chemical and Optical Sensor Systems. Linköping University, Faculty of Science & Engineering.
Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-1744-7322
Show others and affiliations
1999 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 342, no 1-2, 297-306 p.Article in journal (Refereed) Published
Abstract [en]

Under certain conditions morphology changes occur when thin Pd films, grown on SiO2 at room temperature, are subject to elevated temperatures. First holes in the metal are observed, followed by network formation and finally isolation of metal islands. This process is known as agglomeration. The influence of gas exposures on this restructuring process has been studied by following variations in the capacitance of the structure and by atomic force microscopy, transmission electron microscopy and ultraviolet photoelectron spectroscopy. The capacitance measurements show that carbonaceous species have an impeding influence on the rate of agglomeration and may lock the film structure in a thermodynamic non-equilibrium state. By removing these species with oxygen exposure, i.e. by forming volatile CO and CO2, a clean surface is obtained and the agglomeration process can proceed. High oxygen or hydrogen coverages also lower the rate of restructuring, compared to the case of a clean surface. For the clean Pd surface, an apparent activation energy of 0.64 eV is found for the restructuring process.

Place, publisher, year, edition, pages
1999. Vol. 342, no 1-2, 297-306 p.
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-118324DOI: 10.1016/S0040-6090(98)01395-9OAI: oai:DiVA.org:liu-118324DiVA: diva2:814479
Available from: 2015-05-27 Created: 2015-05-27 Last updated: 2015-06-08

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Eriksson, MatsOlsson, LarsErlandsson, RagnarHelmersson, UlfEkedahl, Lars-Gunnar
By organisation
Chemical and Optical Sensor SystemsFaculty of Science & EngineeringDepartment of Medical and Health SciencesPlasma and Coating PhysicsDepartment of Physics, Chemistry and Biology
In the same journal
Thin Solid Films
Condensed Matter Physics

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 117 hits
ReferencesLink to record
Permanent link

Direct link