Hydrogen sensing mechanisms of metal insulator interfaces
1998 (English)In: Accounts of Chemical Research, ISSN 0001-4842, E-ISSN 1520-4898, Vol. 31, no 5, 249-256 p.Article in journal (Refereed) Published
The hydrogen sensitivity of palladium-silicon dioxidesilicon (Pd-MOS) structures was demonstrated about 25 years ago. One of the most interesting features of the Pd-MOS device as a hydrogen sensor is its very large dynamic pressure range. Such devices are now used in several practical applications and in commercially available equipment, both as single sensors and in sensor arrays. We recall that the hydrogen sensitivity of the device occurs due to a hydrogen induced polarization at the Pd-SiO2 interface as schematically shown in Figure 1. During the years, several types of devices have been developed, both with insulators other than silicon dioxide and catalytic metals other than palladium. Furthermore, it has been demonstrated that sensors with thin, discontinuous catalytic metals can detect molecules, like ammonia, which are not detected by sensors with thick continuous palladium gates. 1-3 Although several insulators have been used in hydrogen sensitive Pd-insulator-semiconductor
Place, publisher, year, edition, pages
1998. Vol. 31, no 5, 249-256 p.
IdentifiersURN: urn:nbn:se:liu:diva-118339OAI: oai:DiVA.org:liu-118339DiVA: diva2:814489