Hydrogen adsorption states at the Pd-SiO2 interface and simulation of the response of a Pd metal-oxide-semiconductor hydrogen sensor
1998 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 83, no 8, 3947-3951 p.Article in journal (Refereed) Published
The response of a Pd–SiO 2 –Si hydrogen sensor depends on the reaction kinetics of hydrogen on the Pd surface and on the hydrogen adsorption states at the Pd/SiO 2 interface. In this work we show that besides the dominating hydrogen adsorption state located on the oxide side of the interface, a second state, resulting in opposite hydrogen polarization, exists. This state is possibly a reminiscence of the hydrogen adsorption state on a clean Pd surface. Taking both states into account, a simulation of the hydrogen response over more than ten decades in hydrogen pressures gives good agreement with published data.
Place, publisher, year, edition, pages
1998. Vol. 83, no 8, 3947-3951 p.
IdentifiersURN: urn:nbn:se:liu:diva-118341DOI: 10.1063/1.367150OAI: oai:DiVA.org:liu-118341DiVA: diva2:814495