A model of the Temkin isotherm behaviour for hydrogen adsorption at Pd-SiO2 interfaces
1997 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 82, no 6, 3143-3146 p.Article in journal (Refereed) Published
A simple electrostatic model of the adsorbate–adsorbateinteraction of hydrogen atoms at a Pd–SiO 2 interface is presented. The model predicts a hydrogen adsorption isotherm of the Temkin type. It is found that, in practice, an upper limit for the hydrogen response of a Pd-metal-oxide-semiconductor device exists. The value (in V) is equal to the difference of the initial heats of adsorption (in eV) of the interface and the Pd bulk, respectively. Furthermore, a corresponding maximum hydrogen concentration, at the interface, of 1×10 18 m −2 is predicted. The predictions are in good agreement with previously observed experimental data.
Place, publisher, year, edition, pages
1997. Vol. 82, no 6, 3143-3146 p.
IdentifiersURN: urn:nbn:se:liu:diva-118342DOI: 10.1063/1.366158OAI: oai:DiVA.org:liu-118342DiVA: diva2:814499