The water-forming reaction on thin, SiO2 supported, palladium films
1990 (English)In: Vacuum, ISSN 0042-207X, E-ISSN 1879-2715, Vol. 41, no 1-3, 137-138 p.Article in journal (Refereed) Published
The water-forming reaction has been studied on thin Pd films, evaporated on planar SiO2 substrates. The nominal film thickness varied between 5 and 100 Å. The studies were performed in uhv by means of mass spectrometry, UPS and work function measurements in the temperature range 323–523 K. The film structure was also studied with TEM. The results are compared with previous measurements on 1000 Å, thick, homogeneous Pd films. The structure of the thin Pd films changed dramatically during cyclic H2 and O2 exposures, from that of a continuous film with cracks to that of drop-like metal particles. These structural changes are not observed on the thick (1000 Å) Pd films. Even though there are large structural changes, the water-forming reaction looks qualitatively the same as on a thick Pd film. The total water production however, decreases with decreasing film thickness. We believe that some minor qualitative differences in the water-forming reaction for different nominal Pd film thicknesses, are due to the increasing PdSiO2 boundary as the thickness is reduced.
Place, publisher, year, edition, pages
1990. Vol. 41, no 1-3, 137-138 p.
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-118354DOI: 10.1016/S0042-207X(05)80139-3OAI: oai:DiVA.org:liu-118354DiVA: diva2:814578