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A Nonvolatile Memory Capacitor Based on a Double Gold Nanocrystal Storing Layer and High-k Dielectric Tunneling and Control Layers
Technion Israel Institute Technology, Israel.
Technion Israel Institute Technology, Israel.
Technion Israel Institute Technology, Israel.
Technion Israel Institute Technology, Israel.
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2010 (English)In: Journal of the Electrochemical Society, ISSN 0013-4651, Vol. 157, no 4, H463-H469 p.Article in journal (Refereed) Published
Abstract [en]

We present a metal-insulator-semiconductor nonvolatile memory capacitor based on two gold nanoparticle charge storage layers, two HfO(2) layers, and a multilayer HfNO/HfTiO stack. The device exhibits an equivalent oxide thickness of 7.3 nm, a hysteresis of 15 V at a gate voltage of +11 to -8 V, and a storage charge density of 2.75x10(13) cm(-2). A leakage of 3.6x10(-5) A/cm(2) at -10 V, a breakdown voltage of 13.3 V, and good retention properties with a hysteresis window of 10 V following more than 10 h of consecutive write/erase operations with a +/- 7 V swing were demonstrated. The capacitor characteristics are frequency-independent in the 10 kHz-1 MHz range.

Place, publisher, year, edition, pages
Electrochemical Society , 2010. Vol. 157, no 4, H463-H469 p.
Keyword [en]
dielectric hysteresis; electric breakdown; gold; high-k dielectric thin films; MIS capacitors; MIS structures; nanoparticles; random-access storage; semiconductor storage
National Category
Condensed Matter Physics
URN: urn:nbn:se:liu:diva-118563DOI: 10.1149/1.3302003ISI: 000275586800085OAI: diva2:815495

Funding Agencies|Israeli Ministry of Trade and Industry; KAMEHA Program

Available from: 2015-06-01 Created: 2015-06-01 Last updated: 2015-06-10

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Garbrecht, Magnus
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Thin Film PhysicsFaculty of Science & Engineering
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