A Nonvolatile Memory Capacitor Based on a Double Gold Nanocrystal Storing Layer and High-k Dielectric Tunneling and Control Layers
2010 (English)In: Journal of the Electrochemical Society, ISSN 0013-4651, Vol. 157, no 4, H463-H469 p.Article in journal (Refereed) Published
We present a metal-insulator-semiconductor nonvolatile memory capacitor based on two gold nanoparticle charge storage layers, two HfO(2) layers, and a multilayer HfNO/HfTiO stack. The device exhibits an equivalent oxide thickness of 7.3 nm, a hysteresis of 15 V at a gate voltage of +11 to -8 V, and a storage charge density of 2.75x10(13) cm(-2). A leakage of 3.6x10(-5) A/cm(2) at -10 V, a breakdown voltage of 13.3 V, and good retention properties with a hysteresis window of 10 V following more than 10 h of consecutive write/erase operations with a +/- 7 V swing were demonstrated. The capacitor characteristics are frequency-independent in the 10 kHz-1 MHz range.
Place, publisher, year, edition, pages
Electrochemical Society , 2010. Vol. 157, no 4, H463-H469 p.
dielectric hysteresis; electric breakdown; gold; high-k dielectric thin films; MIS capacitors; MIS structures; nanoparticles; random-access storage; semiconductor storage
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-118563DOI: 10.1149/1.3302003ISI: 000275586800085OAI: oai:DiVA.org:liu-118563DiVA: diva2:815495
Funding Agencies|Israeli Ministry of Trade and Industry; KAMEHA Program2015-06-012015-06-012015-06-10