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Nonvolatile Memory Capacitors Based on Double Gold nanocrystals and HfO2 Tunneling and HfNO/HfTiO Laminate Control High-k Insulator Layers.
Technion Israel Institute Technology, Israel.
Technion Israel Institute Technology, Israel.
Technion Israel Institute Technology, Israel.
Technion Israel Institute Technology, Israel.
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2009 (English)In: PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 7, Electrochemical Society , 2009, Vol. 25, no 6, 465-471 p.Conference paper, Published paper (Refereed)
Abstract [en]

We describe all high-k, nonvolatile metal-insulator-semiconductor memory capacitor with an equivalent oxide thickness of 7.3 nm that makes use of two gold nanocrystal charge storage layers. The device exhibits a large memory hysteresis of about 0.75 V and 15 V, respectively at a sweeping gate voltages of +/- 1V and + 11V to -8V with a maximum storage charge density of similar to 2.75x10(13) cm(-2). The leakage current density is 3.6x10(-5) A/cm(2) at -10 V and the breakdown voltage is in the range of 12.3V - 13.3V. A large memory hysteresis window of similar to 10 V was also observed after more than 10 hours of consecutive write / erase operations with a +/- 7 V swing.

Place, publisher, year, edition, pages
Electrochemical Society , 2009. Vol. 25, no 6, 465-471 p.
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-118565DOI: 10.1149/1.3206646ISI: 000338086300045ISBN: 978-1-60768-093-2 (print)ISBN: 978-1-56677-743-8 (print)OAI: oai:DiVA.org:liu-118565DiVA: diva2:815497
Conference
7th International Symposium on High Dielectric Constant Materials and Gate Stacks held during the 216th Meeting of The Electrochemical-Society
Available from: 2015-06-01 Created: 2015-06-01 Last updated: 2015-06-10

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Garbrecht, Magnus
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CiteExportLink to record
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Citation style
  • apa
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  • Other style
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  • de-DE
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