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The effect of light irradiation on electrons and holes trapping in nonvolotile memory capacitors employing sub 10 nm SiO2-HfO2 stacks and Au nanocrystals
Technion Israel Institute Technology, Israel.
Technion Israel Institute Technology, Israel.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, Faculty of Science & Engineering.
Technion Israel Institute Technology, Israel.
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2011 (English)In: Microelectronic Engineering, ISSN 0167-9317, Vol. 88, no 6, 964-968 p.Article in journal (Refereed) Published
Abstract [en]

We demonstrate the possibility to control charge trapping in the memory stacks comprised of metal nanocrystals (NCs) sandwiched between SiO2 and high-k dielectric films by light irradiation. Non-equilibrium depletion effects in the state of the art charge trapping memories are reported for the first time. The studied nonvolatile memory devices employ Au NCs, thermal SiO2 tunnel layer, atomic layer deposited HfO2 blocking layer and Au/Pt metal gate. The memory windows are 3 V and 10.5 in the dark and under illumination for +/- 10 V programming voltages. Reliability limitations of the studied structure, in particular leakage currents and effects in high electric fields have been investigated in detail and are discussed in view of the mentioned device application. Low programming voltages and currents, and high light sensitivity make suggested NVM structures promising for developing digital imagers with ultralow power consumption. (c) 2011 Elsevier B.V. All rights reserved.

Place, publisher, year, edition, pages
Elsevier , 2011. Vol. 88, no 6, 964-968 p.
National Category
Condensed Matter Physics
URN: urn:nbn:se:liu:diva-118557DOI: 10.1016/j.mee.2010.12.030ISI: 000289186500019OAI: diva2:815502

Funding Agencies|Israeli Ministry of Trade and Industry

Available from: 2015-06-01 Created: 2015-06-01 Last updated: 2015-06-10

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Garbrecht, Magnus
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