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Nonvolatile low-voltage memory transistor based on SiO2 tunneling and HfO2 blocking layers with charge storage in Au nanocrystals
Technion Israel Institute Technology, Israel.
Technion Israel Institute Technology, Israel.
Technion Israel Institute Technology, Israel.
Technion Israel Institute Technology, Israel.
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2011 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 98, no 21, 212902Article in journal (Refereed) Published
Abstract [en]

We demonstrate a low voltage nonvolatile memory field effect transistor comprising thermal SiO2 tunneling and HfO2 blocking layers as the gate dielectric stack and Au nanocrystals as charge storage nodes. The structure exhibits a memory window of similar to 2 V at an applied sweeping voltage of +/- 3 V which increases to 12.6 at +/- 12 V. Retention tests show an extrapolated loss of 16% after ten years in the hysteresis width of the threshold voltage. Dynamic program/erase operation reveal an approximately pulse width independent memory for pulse durations of 1 mu s to 10 ms; longer pulses increase the memory window while for pulses shorter than 1 mu s, the memory windows vanishes. The effective oxide thickness is below 10 nm with very low gate and drain leakage currents. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3595484]

Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2011. Vol. 98, no 21, 212902
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:liu:diva-118558DOI: 10.1063/1.3595484ISI: 000291041600057OAI: oai:DiVA.org:liu-118558DiVA: diva2:815504
Note

Funding Agencies|Alpha Consortium of the Israeli Ministry of Trade and Industry; Technion Russell Berrie Nanotechnology Institute; Israel Council for Higher Education

Available from: 2015-06-01 Created: 2015-06-01 Last updated: 2015-06-10

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Garbrecht, Magnus
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Thin Film PhysicsFaculty of Science & Engineering
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