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Effects of Polytypism on Optical Properties and Band Structure ofIndividual Ga(N)P Nanowires from Correlative Spatially Resolved Structural and Optical Studies
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-9140-6724
Graduate Program of Materials Science and Engineering, University of California, La Jolla, California 92093, United States.
Department of Physics, University of California, La Jolla, California 92093, United States.
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2015 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 15, no 6, 4052-4058 p.Article in journal (Refereed) Published
Abstract [en]

III-V semiconductor nanowires (NWs) have gained significant interest as building blocks in novel nanoscale devices. The one-dimensional (1D) nanostructure architecture allows one to extend band structure engineering beyond quantum confinement effects by utilizing formation of different crystal phases that are thermodynamically unfavorable in bulk materials. It is therefore of crucial importance to understand the influence of variations in the NWs crystal structure on their fundamental physical properties. In this work we investigate effects of structural polytypism on the optical properties of gallium phosphide and GaP/GaNP core/shell NW structures by a correlative investigation on the structural and optical properties of individual NWs. The former is monitored by transmission electron microscopy, whereas the latter is studied via cathodoluminescence (CL) mapping. It is found that structural defects, such as rotational twins in zinc blende (ZB) GaNP, have detrimental effects on light emission intensity at low temperatures by promoting nonradiative recombination processes. On the other hand, formation of the wurtzite (WZ) phase does not notably affect the CL intensity neither in GaP nor in the GaNP alloy. This suggests that zone folding in WZ GaP does not enhance its radiative efficiency, consistent with theoretical predictions. We also show that the change in the lattice structure have negligible effects on the bandgap energies of the GaNP alloys, at least within the range of the investigated nitrogen compositions of <2%. Both WZ and ZB GaNP are found to have a significantly higher efficiency of radiative recombination as compared with that in parental GaP, promising for potential applications of GaNP NWs as efficient nanoscale light emitters within the desirable amber-red spectral range.

Place, publisher, year, edition, pages
2015. Vol. 15, no 6, 4052-4058 p.
Keyword [en]
Gallium phosphide; GaNP; nanowire; wurtzite; electronic structure
National Category
Condensed Matter Physics
URN: urn:nbn:se:liu:diva-118623DOI: 10.1021/acs.nanolett.5b01054ISI: 000356316900060PubMedID: 25988267OAI: diva2:816060
Available from: 2015-06-02 Created: 2015-06-02 Last updated: 2015-07-13

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Dobrovolskiy, AlexanderPersson, Per O. ÅChen, WeiminBuyanova, Irina
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