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Polarized Emission from Single GaN Quantum Dots Grown by Molecular Beam Epitaxy
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology. Department of Physics, Faculty of Science, Thaksin University, 93110 Phattalung, Thailand .
Linköping University, Department of Physics, Chemistry and Biology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.ORCID iD: 0000-0002-4547-6673
Applied Semiconductor Physics, Department of Microtechnology and Nanoscience, Chalmers University of Technology, S‐41296 Göteborg, Sweden.
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2011 (English)Conference paper (Other academic)
Abstract [en]

Polarization resolved microphotoluminescence measurements of single MBE‐grown GaN/Al(Ga)N quantum dots (QDs) have been performed. The exciton and biexciton peaks with full width at half maximum as narrow as <500 μeV  were observed. Interestingly, there exist both positive and negative binding energies of the biexciton, explained in term of different sizes of the measured dots, resulting in different built‐in electric field. Moreover, a strongly linearly polarized emission is observed for the investigated dots with a degree of linear polarization of about 0.9, interpreted as the valence‐band mixing induced by in‐plane anisotropy due to strain and/or QD shape.

Place, publisher, year, edition, pages
2011. Vol. 1399, no 1, 541-542 p.
National Category
Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:liu:diva-118682DOI: 10.1063/1.3666493ISBN: 978-0-7354-1002-2OAI: oai:DiVA.org:liu-118682DiVA: diva2:816567
Conference
30th International Conference on the Physics of Semiconductors (ICPS)
Available from: 2015-06-03 Created: 2015-06-03 Last updated: 2015-06-18

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Amloy, SupaluckKarlsson, K FredrikHoltz, Per-Olof
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Department of Physics, Chemistry and BiologyThe Institute of TechnologySemiconductor MaterialsFaculty of Science & Engineering
Atom and Molecular Physics and Optics

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