Quantum Dot Charging By Means Of Temperature And Magnetic Field
2011 (English)Conference paper (Other academic)
A micro‐photoluminescence study of individual InAs/GaAs quantum dots is presented. It is demonstrated that by varying the strength of an applied magnetic field and/or the temperature, the charge state of a quantum dot can be tuned. The charge tuning mechanism is shown to be due to the modification of the electron and hole transport in the wetting layer plane prior to their capture into the quantum dot.
Place, publisher, year, edition, pages
2011. Vol. 1399, no 1, 433-434 p.
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-118732DOI: 10.1063/1.3666439ISBN: 978-0-7354-1002-2OAI: oai:DiVA.org:liu-118732DiVA: diva2:816588
30th International Conference on The Physics of Semiconductors (ICPS)