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Quantum Dot Charging By Means Of Temperature And Magnetic Field
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
A. F. Ioffe Physical‐Technical Institute, 194021, Polytechnicheskaya 26, St. Petersburg, Russia .
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, Faculty of Science & Engineering.
2011 (English)Conference paper, Published paper (Other academic)
Abstract [en]

A micro‐photoluminescence study of individual InAs/GaAs quantum dots is presented. It is demonstrated that by varying the strength of an applied magnetic field and/or the temperature, the charge state of a quantum dot can be tuned. The charge tuning mechanism is shown to be due to the modification of the electron and hole transport in the wetting layer plane prior to their capture into the quantum dot.

Place, publisher, year, edition, pages
2011. Vol. 1399, no 1, 433-434 p.
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-118732DOI: 10.1063/1.3666439ISBN: 978-0-7354-1002-2 (print)OAI: oai:DiVA.org:liu-118732DiVA: diva2:816588
Conference
30th International Conference on The Physics of Semiconductors (ICPS)
Available from: 2015-06-03 Created: 2015-06-03 Last updated: 2015-06-18

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Moskalenko, E. S.Holtz, Per-Olof
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Semiconductor MaterialsFaculty of Science & Engineering
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